Hybrid Circuit Quantum Electrodynamics Landau-Zener Interferometry Nanowire Synthesis Nitrogen Vacancy Centers in Diamond Single Charge Coherence Spin-Momentum Locking in Topological Insulators Spin-Orbit Qubits Ultra-Coherent Spin Qubits
Our research focuses on quantum control of nanometer scale systems. Semiconductor quantum dots are used to isolate single electron spins, which exhibit long quantum coherence times. These systems allow quantum mechanics to be harnessed in a solid state environment for the implementation of quantum gates. We use nanofabrication to create artificially structured systems with experimentally tunable Hamiltonians that can be controlled on sub-nanosecond timescales. Recent research examines strong light-matter interactions in the circuit quantum electrodynamics architecture, with a goal of generating long-range many body entanglement. Silicon and diamond are ideal host materials for spin coherence, leading to spin coherence times that now approach 10 seconds. A major effort in the group consists of developing a scalable quantum computing architecture in isotopically purified silicon. Research advances are enabled by a tight feedback loop that links nanoscale materials synthesis and advanced transport measurements.

 Recent Publications

Cavity-mediated entanglement generation via Landau-Zener interferometry

C. M. Quintana, K. D. Petersson, L. W. McFaul, S. J. Srinivasan, A. A. Houck, J. R. Petta
arXiv:1212.0726

Robust quantum gates for a singlet-triplet spin qubit

Hugo Ribeiro, J. R. Petta, Guido Burkard
arXiv:1210.1957

Coherent adiabatic spin control in the presence of charge noise using tailored pulses

Hugo Ribeiro, Guido Burkard, J. R. Petta, H. Lu, A. C. Gossard
arXiv:1207.2962

Circuit quantum electrodynamics with a spin qubit

K. D. Petersson, L. W. McFaul, M. D. Schroer, M. Jung, J. M. Taylor, A. A. Houck, J. R. Petta
Nature 490, 380 (2012)

Radio frequency charge parity meter

M. D. Schroer, M. Jung, K. D. Petersson, J. R. Petta
Phys. Rev. Lett. 109, 166804 (2012)

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

L. D. Alegria, J. R. Petta
Nanotech. 23, 435601 (2012)

Structural and electrical characterization of Bi2Se3 nanostructures grown by metal–organic chemical vapor deposition

L. D. Alegria, M. D. Schroer, A. Chatterjee, G. R. Poirier, M. Pretko, S. K. Patel, and J. R. Petta
Nano Lett. 12, 4711 (2012)